2SA2126-TL-H Equivalent & Substitute Parts

Part Overview

The 2SA2126-TL-H is a PNP bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 3 A maximum collector current. This surface mount device in TO-252-3 DPAK package is designed for general-purpose switching and amplification applications requiring moderate frequency response at 390 MHz transition frequency with 800 mW power dissipation capability.

The 2SA2126-TL-H is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor specification.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	3	A
Power - Max	800	mW
Frequency - Transition	390	MHz
Vce Saturation (Max) @ Ib, Ic	520 mV @ 100 mA, 2 A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100 mA, 2 V	—
Operating Temperature (Max)	150	°C
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the 2SA2126-TL-H is determined by the following critical parameters:

Mandatory Matching Criteria:

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 50 V minimum
Current - Collector (Ic) (Max): 3 A minimum
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type: Surface Mount

Performance Parameters Affecting Substitution:

Frequency - Transition: 390 MHz (primary specification)
Power - Max: 800 mW (minimum requirement)
Vce Saturation: 520 mV @ 100 mA, 2 A (switching performance)
DC Current Gain (hFE): 200 @ 100 mA, 2 V (amplification capability)

Substitute parts are classified into three categories:

Direct Manufacturer Equivalent: Parts from onsemi with identical electrical specifications and packaging, differing only in packaging format (Cut Tape vs. Tape & Reel).

Similar Manufacturer Parts: Parts from alternative manufacturers (Micro Commercial Co, Rohm Semiconductor, Toshiba) meeting or exceeding the mandatory matching criteria with variations in secondary performance parameters such as transition frequency or saturation voltage.

Parametric Equivalents: Parts with identical electrical specifications but different product status or packaging configuration, suitable for direct replacement in circuit design.

Parameter Comparison

Part Number	Manufacturer	Ic (Max)	Vce Breakdown (Max)	Power (Max)	Frequency (Transition)	Vce Sat @ 100mA, 2A	hFE (Min) @ 100mA, 2V	Product Status	Package
2SA2126-TL-H	onsemi	3 A	50 V	800 mW	390 MHz	520 mV	200	Obsolete	TP-FA
2SA2126-TL-E	onsemi	3 A	50 V	800 mW	390 MHz	520 mV	200	Active	TP-FA
2SB1202T-TL-E	onsemi	3 A	50 V	1 W	150 MHz	700 mV	200	Obsolete	TP-FA
2SB1201T-TL-E	onsemi	2 A	50 V	800 mW	150 MHz	700 mV @ 50mA, 1A	200	Obsolete	TP-FA
2SB1184-R-TP	Micro Commercial Co	3 A	50 V	1 W	70 MHz	1 V @ 200mA, 2A	82 @ 500mA, 3V	Active	DPAK
2SB1184-Q-TP	Micro Commercial Co	3 A	50 V	1 W	70 MHz	1 V @ 200mA, 2A	82 @ 500mA, 3V	Active	DPAK
2SB1184-P-TP	Micro Commercial Co	3 A	50 V	1 W	70 MHz	1 V @ 200mA, 2A	82 @ 500mA, 3V	Active	DPAK
2SAR572DGTL	Rohm Semiconductor	5 A	30 V	10 W	300 MHz	400 mV @ 100mA, 2A	200 @ 500mA, 3V	Active	CPT3
2SB906-Y(TE16L1,NQ	Toshiba Semiconductor and Storage	3 A	60 V	1 W	9 MHz	1.7 V @ 300mA, 3A	100 @ 500mA, 5V	Active	PW-MOLD

Engineering Selection Recommendations

Primary Recommendation: 2SA2126-TL-E

The 2SA2126-TL-E is the direct parametric equivalent of the 2SA2126-TL-H, offering identical electrical specifications across all critical parameters including collector current, breakdown voltage, power dissipation, transition frequency, saturation voltage, and current gain. The primary distinction is product status: 2SA2126-TL-E is classified as Active, ensuring ongoing availability and supply chain support. Both parts comply with RoHS3 and REACH requirements with identical moisture sensitivity levels. This part is suitable for direct substitution without circuit redesign.

Secondary Recommendation: 2SB1202T-TL-E

The 2SB1202T-TL-E meets all mandatory matching criteria with 3 A collector current and 50 V breakdown voltage in identical TO-252-3 DPAK packaging. This part provides increased power dissipation capability (1 W versus 800 mW) and higher saturation voltage (700 mV versus 520 mV). The transition frequency is reduced to 150 MHz, suitable for applications not requiring the full 390 MHz bandwidth of the original part. RoHS3 and REACH compliance are maintained.

Alternative Recommendation: 2SB1184 Series (R-TP, Q-TP, P-TP)

The 2SB1184 series from Micro Commercial Co meets mandatory electrical requirements with 3 A collector current and 50 V breakdown voltage in TO-252-3 DPAK packaging. All variants are Active status. These parts feature reduced transition frequency (70 MHz) and lower DC current gain (82 versus 200), making them suitable for lower-frequency switching applications. Saturation voltage is higher at 1 V. Packaging variants differ: 2SB1184-R-TP and 2SB1184-Q-TP are supplied on Tape & Reel; 2SB1184-P-TP is supplied in Bulk.

Limited Recommendation: 2SAR572DGTL

The 2SAR572DGTL from Rohm Semiconductor exceeds collector current requirements (5 A) and provides superior power dissipation (10 W). However, the breakdown voltage is reduced to 30 V, making this part unsuitable for applications requiring the full 50 V rating. This part is recommended only for applications with reduced voltage requirements and higher current demands. Packaging differs (CPT3 versus TP-FA).

Not Recommended: 2SB906-Y(TE16L1,NQ

The 2SB906-Y(TE16L1,NQ from Toshiba meets collector current and voltage requirements but exhibits significantly reduced transition frequency (9 MHz versus 390 MHz) and lower DC current gain (100 versus 200). Saturation voltage is substantially higher at 1.7 V. This part is suitable only for low-frequency switching applications and is not recommended for designs requiring the frequency response of the original part.

Not Recommended: 2SB1201T-TL-E

The 2SB1201T-TL-E has reduced maximum collector current (2 A versus 3 A), making it unsuitable for applications requiring the full 3 A rating of the original part.

Frequently Asked Questions (FAQ)

Q: Can 2SA2126-TL-E be used as a direct replacement for 2SA2126-TL-H?

A: Yes. The 2SA2126-TL-E is a parametric equivalent with identical electrical specifications. The only difference is product status (Active versus Obsolete) and packaging format (Tape & Reel versus Cut Tape). No circuit modifications are required.

Q: What is the difference between 2SA2126-TL-H and 2SB1202T-TL-E?

A: Both parts meet the mandatory criteria of 3 A collector current and 50 V breakdown voltage in TO-252-3 DPAK packaging. The 2SB1202T-TL-E provides higher power dissipation (1 W versus 800 mW) but operates at lower transition frequency (150 MHz versus 390 MHz) and exhibits higher saturation voltage (700 mV versus 520 mV). Selection depends on application frequency requirements.

Q: Are the 2SB1184 variants suitable replacements?

A: The 2SB1184-R-TP, 2SB1184-Q-TP, and 2SB1184-P-TP meet mandatory electrical requirements (3 A, 50 V, TO-252-3 DPAK) and are Active status. However, transition frequency is significantly reduced (70 MHz), and DC current gain is lower (82 versus 200). These parts are suitable for low-frequency switching applications only.

Q: Why is 2SAR572DGTL not recommended as a direct substitute?

A: The 2SAR572DGTL has a reduced breakdown voltage rating of 30 V, below the 50 V requirement of the original part. While it exceeds current and power requirements, it cannot be used in circuits designed for 50 V operation.

Q: What packaging formats are available for equivalent parts?

A: The 2SA2126-TL-H is supplied in Cut Tape (CT) & Digi-Reel format with TP-FA supplier device package. The 2SA2126-TL-E is supplied in Tape & Reel (TR) format with identical TP-FA package. The 2SB1184 series is available in Tape & Reel (R-TP, Q-TP variants) and Bulk (P-TP variant) with DPAK supplier device package. All maintain TO-252-3 physical form factor compatibility.

Q: Do all substitute parts comply with RoHS3 and REACH requirements?

A: All recommended substitute parts (2SA2126-TL-E, 2SB1202T-TL-E, 2SB1201T-TL-E, and 2SB1184 series) are RoHS3 Compliant and REACH Unaffected. Moisture Sensitivity Level is 1 (Unlimited) for all parts, indicating no special handling requirements.

Q: What is the impact of transition frequency differences on circuit performance?

A: Transition frequency determines the maximum useful operating frequency of the transistor. The original 2SA2126-TL-H operates at 390 MHz. Substitutes with lower transition frequencies (2SB1202T-TL-E at 150 MHz, 2SB1184 series at 70 MHz) are suitable for applications operating below their respective frequency limits. Applications requiring high-frequency switching or RF performance must use parts with adequate transition frequency specifications.

Q: How do saturation voltage differences affect circuit design?

A: Saturation voltage determines the voltage drop across the transistor in the saturated (fully conducting) state. The original part specifies 520 mV at 100 mA, 2 A. Higher saturation voltages (700 mV for 2SB1202T-TL-E, 1 V for 2SB1184 series) result in greater power dissipation and reduced output voltage swing. Applications with tight voltage margin requirements must account for these differences.

Q: Can parts with different DC current gain values be substituted?

A: DC current gain (hFE) affects base current requirements for a given collector current. The original part specifies 200 minimum at 100 mA, 2 V. The 2SB1184 series has lower gain (82 at 500 mA, 3 V), requiring higher base current for equivalent collector current. Circuit designs using current-limiting base resistors must be evaluated for compatibility. The 2SA2126-TL-E maintains identical gain specifications.

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