2N5830 Equivalent & Substitute Parts

Part Overview

The 2N5830 is an obsolete NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 200 mA maximum collector current in a TO-92-3 through-hole package. The device is designed for general-purpose switching and amplification applications with a maximum power dissipation of 625 mW and operating temperature range of -55°C to 150°C.

Due to the obsolete product status of the 2N5830, equivalent and substitute parts are necessary for ongoing production, maintenance, and new design implementations. Active alternatives from Diodes Incorporated provide enhanced electrical performance, extended temperature ranges, and improved availability while maintaining compatible through-hole packaging.

Key Parameters

Parameter	2N5830	Unit
Transistor Type	NPN	-
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	200	mA
Power - Max	625	mW
Vce Saturation (Max)	250 mV @ 5 mA, 50 mA	-
DC Current Gain (hFE) (Min)	80 @ 10 mA, 5 V	-
Current - Collector Cutoff (Max)	50	nA
Operating Temperature	-55 to 150	°C
Mounting Type	Through Hole	-
Package / Case	TO-92-3	-
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution of the 2N5830 is determined by the following critical parameters: NPN transistor type, 100 V minimum collector-emitter breakdown voltage rating, through-hole mounting configuration, and TO-92-compatible package form factor. All substitute parts listed maintain these core requirements.

Substitute parts are grouped into two categories based on electrical performance characteristics:

Category 1: Direct Current Rating Equivalents (200 mA to 500 mA) Parts that maintain or exceed the original 200 mA collector current specification while preserving the 100 V voltage rating. These include ZTX415 (500 mA, 100 V) and ZTX694B/ZTX694BSTZ (500 mA, 120 V).

Category 2: Enhanced Current Capability (1 A and above) Parts that provide significantly higher collector current ratings (1 A to 4 A) at 100 V or higher voltage ratings. These include ZTX453 (1 A, 100 V), ZTX653 (2 A, 100 V), and ZTX853 (4 A, 100 V).

All substitute parts feature active product status, RoHS3 compliance, and extended operating temperature ranges (-55°C to 200°C), providing superior long-term availability and environmental compliance compared to the obsolete 2N5830.

Parameter Comparison

Parameter	2N5830	ZTX415	ZTX453	ZTX653	ZTX694B	ZTX694BSTZ	ZTX853	Unit
Transistor Type	NPN	NPN - Avalanche Mode	NPN	NPN	NPN	NPN	NPN	-
Voltage - Collector Emitter Breakdown (Max)	100	100	100	100	120	120	100	V
Current - Collector (Ic) (Max)	200	500	1000	2000	500	500	4000	mA
Power - Max	625	680	1000	1000	1000	1000	1200	mW
Vce Saturation (Max)	250 @ 5, 50	500 @ 1, 10	700 @ 15, 150	500 @ 200, 2000	500 @ 5, 400	500 @ 5, 400	200 @ 400, 4000	mV @ mA, mA
DC Current Gain (hFE) (Min)	80 @ 10, 5V	25 @ 10, 10V	40 @ 150, 10V	-	400 @ 200, 2V	400 @ 200, 2V	100 @ 2000, 2V	@ mA, V
Current - Collector Cutoff (Max)	50	100	100	100	100	100	50	nA
Frequency - Transition	-	40	150	175	130	130	130	MHz
Operating Temperature	-55 to 150	-55 to 200	-55 to 200	-55 to 200	-55 to 200	-55 to 200	-55 to 200	°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	-
Package / Case	TO-92-3	E-Line-3	E-Line-3	E-Line-3	E-Line-3	E-Line-3, Formed Leads	E-Line-3	-
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	-
RoHS Status	-	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

For Direct Replacement in Existing Designs:

ZTX415 and ZTX694B/ZTX694BSTZ are suitable for applications requiring collector current ratings at or below 500 mA with 100 V or 120 V voltage ratings. These parts maintain electrical performance characteristics compatible with the 2N5830 while providing active product status and RoHS3 compliance. ZTX694BSTZ offers the highest inventory availability (25,200 pcs) with formed leads packaging option.

For Enhanced Performance Applications:

ZTX453, ZTX653, and ZTX853 provide progressively higher current handling capabilities (1 A, 2 A, and 4 A respectively) while maintaining 100 V voltage ratings. These parts are suitable for applications where the original 200 mA specification was a design constraint rather than a requirement. All three parts feature active product status and RoHS3 compliance.

For Voltage-Rated Applications:

ZTX694B and ZTX694BSTZ provide 120 V collector-emitter breakdown voltage, exceeding the 2N5830 specification by 20 V. These parts are appropriate for applications requiring enhanced voltage margin or operating in higher voltage environments.

Compliance and Availability:

All substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. All substitute parts feature extended operating temperature ranges (-55°C to 200°C) compared to the 2N5830 (-55°C to 150°C), providing improved thermal performance for demanding applications.

Frequently Asked Questions (FAQ)

Q: Can ZTX415 directly replace the 2N5830 in all applications?

A: ZTX415 is electrically compatible for applications operating at or below 200 mA collector current and 100 V collector-emitter voltage. The E-Line-3 package is physically compatible with TO-92-3 through-hole mounting. However, ZTX415 features avalanche mode operation, which may introduce different transient response characteristics in specific circuit topologies. Verification of circuit performance is necessary for critical applications.

Q: What is the difference between ZTX694B and ZTX694BSTZ?

A: ZTX694B and ZTX694BSTZ are electrically identical parts with identical electrical specifications (120 V, 500 mA, 130 MHz transition frequency). The primary difference is packaging format: ZTX694B is supplied in bulk packaging, while ZTX694BSTZ is supplied in cut tape (CT) with formed leads. ZTX694BSTZ offers significantly higher inventory availability (25,200 pcs versus 4,548 pcs) and is suitable for automated assembly processes.

Q: Are all substitute parts pin-compatible with the 2N5830?

A: All substitute parts feature TO-92-compatible E-Line-3 packages with three leads in the same physical configuration as the TO-92-3 package. Pin assignments are identical: Base, Collector, and Emitter. Physical compatibility is confirmed for through-hole mounting applications.

Q: Which substitute part provides the closest electrical match to the 2N5830?

A: ZTX853 provides the closest match in terms of collector cutoff current (50 nA, identical to 2N5830) and saturation voltage characteristics (200 mV at specified conditions). However, ZTX853 is rated for 4 A maximum collector current, significantly exceeding the 2N5830 specification. For applications requiring the original 200 mA specification, ZTX415 or ZTX694B provide more appropriate current ratings.

Q: Can substitute parts be used in high-frequency applications?

A: All substitute parts feature transition frequency specifications (40 MHz to 175 MHz) compared to the 2N5830, which does not specify transition frequency. ZTX653 and ZTX453 provide the highest transition frequencies (175 MHz and 150 MHz respectively), making them suitable for higher-frequency switching applications. Circuit design verification is required to confirm frequency performance in specific applications.

Q: What is the temperature operating range advantage of substitute parts?

A: All substitute parts operate from -55°C to 200°C, providing a 50°C extended upper temperature limit compared to the 2N5830 (-55°C to 150°C). This extended range improves reliability in high-temperature environments and provides additional thermal margin for applications operating near maximum rated temperatures.

Q: Are substitute parts available in surface-mount packages?

A: All substitute parts listed are through-hole devices in E-Line-3 or TO-92-compatible packages. Surface-mount alternatives are not included in this substitution list. Applications requiring surface-mount packaging require separate component evaluation.

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