2N4401RLRAG Equivalent & Substitute Parts

Part Overview

The 2N4401RLRAG is an NPN bipolar junction transistor manufactured by onsemi, rated for 40 V collector-emitter breakdown voltage and 600 mA maximum collector current. This device is packaged in a through-hole TO-92 configuration and is designed for general-purpose small-signal amplification applications. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

2N4401RLRAG
onsemiIn Stock: 97592N4401RLRAG Datasheet
2N4401RLRAG
Current Part
2N4401TA
onsemiIn Stock: 896882N4401TA Datasheet
2N4401TA
Direct
2N4401TAR
onsemiIn Stock: 401762N4401TAR Datasheet
2N4401TAR
Direct
2N4401TF
Fairchild SemiconductorIn Stock: 21252N4401TF Datasheet
2N4401TF
Direct
2N4401TFR
onsemiIn Stock: 241262N4401TFR Datasheet
2N4401TFR
Direct
KSP2222ATA
Fairchild SemiconductorIn Stock: 55246KSP2222ATA Datasheet
KSP2222ATA
Similar
MMBT4401LT1G
onsemiIn Stock: 605376MMBT4401LT1G Datasheet
MMBT4401LT1G
Similar
PN2222TA
onsemiIn Stock: 4582PN2222TA Datasheet
PN2222TA
Similar
PN2222TF
Fairchild SemiconductorIn Stock: 64925PN2222TF Datasheet
PN2222TF
Similar
2N4401-AP
Micro Commercial CoIn Stock: 154062N4401-AP Datasheet
2N4401-AP
Similar

Key Parameters

Parameter Value
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 40 V
Current - Collector (Ic) (Max) 600 mA
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V
Power - Max 625 mW
Frequency - Transition 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3

Substitute Part Grouping Explanation

Substitution of the 2N4401RLRAG is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor Type: NPN (required match)
  • Voltage - Collector Emitter Breakdown (Max): 40 V minimum
  • Current - Collector (Ic) (Max): 600 mA minimum
  • DC Current Gain (hFE) (Min): 100 @ 150mA, 1V minimum
  • Frequency - Transition: 250MHz minimum
  • Operating Temperature Range: -55°C ~ 150°C (TJ) minimum

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole (for direct PCB replacement)
  • Package / Case: TO-92-3 or TO-226-3 (for form-fit-function compatibility)

Substitute parts are grouped into two categories:

Direct Substitutes (Identical Electrical and Mechanical Parameters): Parts that match all electrical specifications and maintain through-hole TO-92-3 packaging, enabling direct board-level replacement without design modification.

Similar Substitutes (Equivalent Electrical Performance, Different Packaging or Minor Parameter Variations): Parts that meet or exceed electrical requirements but may differ in mounting type (surface mount versus through hole) or have minor parameter deviations that remain functionally compatible within the application envelope.

Parameter Comparison

Part Number Manufacturer Transistor Type Vce Breakdown (Max) Ic (Max) Vce Sat (Max) hFE (Min) Power (Max) Frequency Mounting Type Package Product Status
2N4401RLRAG onsemi NPN 40 V 600 mA 750mV @ 50mA, 500mA 100 @ 150mA, 1V 625 mW 250MHz Through Hole TO-92-3 Obsolete
2N4401TA onsemi NPN 40 V 600 mA 750mV @ 50mA, 500mA 100 @ 150mA, 1V 625 mW 250MHz Through Hole TO-92-3 Active
2N4401TAR onsemi NPN 40 V 600 mA 750mV @ 50mA, 500mA 100 @ 150mA, 1V 625 mW 250MHz Through Hole TO-92-3 Active
2N4401TF Fairchild Semiconductor NPN 40 V 600 mA 750mV @ 50mA, 500mA 100 @ 150mA, 1V 625 mW 250MHz Through Hole TO-92-3 Active
2N4401TFR onsemi NPN 40 V 600 mA 750mV @ 50mA, 500mA 100 @ 150mA, 1V 625 mW 250MHz Through Hole TO-92-3 Active
2N4401-AP Micro Commercial Co NPN 40 V 600 mA 750mV @ 50mA, 500mA 100 @ 150mA, 1V 600 mW 250MHz Through Hole TO-92-3 Obsolete
KSP2222ATA Fairchild Semiconductor NPN 40 V 600 mA 1V @ 50mA, 500mA 100 @ 150mA, 10V 625 mW 300MHz Through Hole TO-92-3 Active
PN2222TF Fairchild Semiconductor NPN 30 V 600 mA 1V @ 50mA, 500mA 100 @ 150mA, 10mV 625 mW 300MHz Through Hole TO-92-3 Active
MMBT4401LT1G onsemi NPN 40 V 600 mA 750mV @ 50mA, 500mA 100 @ 150mA, 1V 300 mW 250MHz Surface Mount SOT-23-3 Active

Engineering Selection Recommendations

Direct Replacement (Identical Electrical and Mechanical Specifications):

The following parts provide direct substitution for the 2N4401RLRAG without design modification:

  • 2N4401TA (onsemi): Active product status with identical electrical parameters and through-hole TO-92-3 packaging. RoHS3 compliant.
  • 2N4401TAR (onsemi): Active product status with identical electrical parameters and through-hole TO-92-3 packaging. RoHS3 compliant.
  • 2N4401TF (Fairchild Semiconductor): Active product status with identical electrical parameters and through-hole TO-92-3 packaging.
  • 2N4401TFR (onsemi): Active product status with identical electrical parameters and through-hole TO-92-3 packaging. RoHS3 compliant.

All direct replacements maintain the 40 V breakdown voltage, 600 mA collector current, 625 mW power dissipation, and 250 MHz transition frequency of the original part.

Functionally Compatible Substitutes (Equivalent Performance, Different Packaging or Minor Variations):

  • KSP2222ATA (Fairchild Semiconductor): Meets electrical requirements with 40 V breakdown voltage and 600 mA collector current. Offers higher transition frequency (300MHz) and slightly elevated saturation voltage (1V). Through-hole TO-92-3 packaging. Active product status.

  • PN2222TF (Fairchild Semiconductor): Meets electrical requirements with 600 mA collector current and 625 mW power dissipation. Operates at reduced breakdown voltage (30 V versus 40 V), suitable for applications with lower voltage headroom requirements. Higher transition frequency (300MHz). Through-hole TO-92-3 packaging. Active product status.

  • MMBT4401LT1G (onsemi): Electrically equivalent to the 2N4401RLRAG with identical 40 V breakdown voltage, 600 mA collector current, and 250 MHz transition frequency. Surface-mount SOT-23-3 packaging requires PCB redesign. Reduced power dissipation (300 mW versus 625 mW) due to smaller package. RoHS3 compliant. Active product status.

Compliance and Regulatory Status:

All recommended substitutes maintain REACH Unaffected status and EAR99 export classification consistent with the original part. Active product substitutes (2N4401TA, 2N4401TAR, 2N4401TF, 2N4401TFR, KSP2222ATA, PN2222TF, MMBT4401LT1G) provide long-term supply assurance compared to the obsolete 2N4401RLRAG.

Frequently Asked Questions (FAQ)

Q: Can 2N4401TA be used as a direct replacement for 2N4401RLRAG?

A: Yes. The 2N4401TA is electrically and mechanically identical to the 2N4401RLRAG. Both devices feature 40 V breakdown voltage, 600 mA maximum collector current, 625 mW power dissipation, and through-hole TO-92-3 packaging. The 2N4401TA is an active product, providing improved supply availability.

Q: What is the difference between 2N4401TF and 2N4401TFR?

A: Both parts are electrically identical with 40 V breakdown voltage, 600 mA collector current, and 250 MHz transition frequency. The primary difference is packaging designation: 2N4401TF is supplied by Fairchild Semiconductor, while 2N4401TFR is supplied by onsemi. Both are through-hole TO-92-3 packages suitable for direct board replacement.

Q: Can MMBT4401LT1G replace 2N4401RLRAG in an existing design?

A: MMBT4401LT1G is electrically equivalent but requires PCB redesign. The MMBT4401LT1G uses surface-mount SOT-23-3 packaging, whereas the 2N4401RLRAG uses through-hole TO-92-3 packaging. Electrical parameters (40 V breakdown, 600 mA collector current, 250 MHz transition frequency) are identical. Power dissipation is reduced to 300 mW due to the smaller package.

Q: Is PN2222TF a suitable substitute for 2N4401RLRAG?

A: PN2222TF is functionally compatible but operates at reduced breakdown voltage (30 V versus 40 V). Use PN2222TF only in applications where the maximum supply voltage does not exceed 30 V. Collector current (600 mA), power dissipation (625 mW), and through-hole TO-92-3 packaging are compatible. PN2222TF offers higher transition frequency (300MHz).

Q: What is the advantage of KSP2222ATA over 2N4401RLRAG?

A: KSP2222ATA maintains the 40 V breakdown voltage and 600 mA collector current of the 2N4401RLRAG while offering higher transition frequency (300MHz versus 250MHz). Saturation voltage is slightly elevated (1V versus 750mV). Both use through-hole TO-92-3 packaging. KSP2222ATA is an active product with established supply channels.

Q: Are all substitute parts RoHS3 compliant?

A: RoHS3 compliance is confirmed for 2N4401TA, 2N4401TAR, 2N4401TFR, and MMBT4401LT1G. Compliance status for 2N4401TF, KSP2222ATA, and PN2222TF is not specified in the provided data. Verify RoHS3 compliance with the manufacturer if regulatory certification is required for your application.

Q: Can I use 2N4401-AP as a replacement for 2N4401RLRAG?

A: 2N4401-AP is electrically and mechanically compatible with identical 40 V breakdown voltage, 600 mA collector current, and through-hole TO-92-3 packaging. However, 2N4401-AP is listed as obsolete, similar to the 2N4401RLRAG. Active product alternatives (2N4401TA, 2N4401TAR, 2N4401TF, 2N4401TFR) are recommended for new designs and long-term supply assurance.

Q: What packaging options are available for 2N4401 equivalents?

A: Through-hole TO-92-3 packaging is available for 2N4401TA, 2N4401TAR, 2N4401TF, 2N4401TFR, KSP2222ATA, and PN2222TF, enabling direct board-level replacement. Surface-mount SOT-23-3 packaging is available for MMBT4401LT1G, requiring PCB redesign but offering reduced board space and improved thermal characteristics for high-density applications.

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