1N5822 Schottky Rectifier Diode Equivalent & Substitute Parts

Part Overview

The 1N5822 is a through-hole Schottky rectifier diode rated for 40 V DC reverse voltage and 3 A average rectified current. Manufactured by onsemi in DO-201AD axial package, this component is classified as obsolete product status. The 1N5822 exhibits fast recovery characteristics with switching speed ≤ 500 ns at currents > 200 mA, making it suitable for high-frequency rectification applications. Due to obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements.

Substiute Parts

1N5822
onsemiIn Stock: 269321N5822 Datasheet
1N5822
Current Part
1N5822G
Microchip TechnologyIn Stock: 158961N5822G Datasheet
1N5822G
Direct
1N5822RLG
onsemiIn Stock: 18571N5822RLG Datasheet
1N5822RLG
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1N5822-AP
Micro Commercial CoIn Stock: 8201N5822-AP Datasheet
1N5822-AP
Direct
1N5822
Microchip TechnologyIn Stock: 269381N5822 Datasheet
1N5822
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1N5822
Microchip TechnologyIn Stock: 269381N5822 Datasheet
1N5822
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1N5822-TP
Micro Commercial CoIn Stock: 103301N5822-TP Datasheet
1N5822-TP
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1N5822RL
STMicroelectronicsIn Stock: 20911N5822RL Datasheet
1N5822RL
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SB340-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1759SB340-E3/54 Datasheet
SB340-E3/54
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SB340-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2438SB340-E3/73 Datasheet
SB340-E3/73
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SB340_R2_00001
Panjit International Inc.In Stock: 994SB340_R2_00001 Datasheet
SB340_R2_00001
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ZHCS750TA
Diodes IncorporatedIn Stock: 22983ZHCS750TA Datasheet
ZHCS750TA
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1N5822-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 20421N5822-E3/54 Datasheet
1N5822-E3/54
Parametric Equivalent
1N5822-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 31941N5822-E3/73 Datasheet
1N5822-E3/73
Parametric Equivalent
1N5822T/R
EIC SEMICONDUCTOR INC.In Stock: 36991N5822T/R Datasheet
1N5822T/R
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 525 mV @ 3 A mV
Speed Fast Recovery ≤ 500 ns, > 200 mA (Io) ns
Current - Reverse Leakage @ Vr 500 µA @ 40 V
Capacitance @ Vr, F 190 pF @ 4 V, 1 MHz
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Operating Temperature - Junction -65 to 125 °C
Technology Schottky
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 1N5822 is determined by electrical and mechanical parameter alignment within the Schottky rectifier diode category. The critical parameters governing substitution are:

Electrical Parameters:

  • Voltage - DC Reverse (Vr) (Max): 40 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Voltage - Forward (Vf) (Max) @ If: ≤ 525 mV @ 3 A
  • Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)
  • Current - Reverse Leakage @ Vr: ≤ 500 µA @ 40 V

Mechanical Parameters:

  • Mounting Type: Through Hole
  • Package / Case: DO-201AD or equivalent axial package (DO-27, B)
  • Operating Temperature - Junction: -55°C to 125°C minimum range

Substitute parts are grouped into two categories: direct equivalents (identical electrical and mechanical specifications) and similar parts (equivalent electrical performance with minor parameter variations within acceptable engineering tolerances). All substitute parts maintain Schottky technology, through-hole mounting, and axial package configuration.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 3A [mV] Speed [ns] Ir @ 40V [µA] Package Product Status Inventory [Pcs]
1N5822 onsemi 40 3 525 ≤ 500 500 DO-201AD Obsolete 26834
1N5822G Microchip Technology Axial Active 15800
1N5822RLG onsemi 40 3 525 ≤ 500 2 DO-201AA, DO-27 Active 1781
1N5822-AP Micro Commercial Co 40 3 525 ≤ 500 500 DO-201AD Active 732
1N5822 Microchip Technology 40 3 500 ≤ 500 100 B, Axial Active 26834
1N5822-TP Micro Commercial Co 40 3 525 ≤ 500 500 DO-201AD Active 10223
1N5822RL STMicroelectronics 40 3 525 ≤ 500 2 DO-201AD Active 2000
SB340-E3/54 Vishay General Semiconductor - Diodes Division 40 3 490 ≤ 500 500 DO-201AD Active 1711
SB340-E3/73 Vishay General Semiconductor - Diodes Division 40 3 490 ≤ 500 500 DO-201AD Active 2400
SB340_R2_00001 Panjit International Inc. 40 3 500 ≤ 500 200 DO-201AD Active 937

Engineering Selection Recommendations

Direct Equivalents (Recommended for Replacement):

The following parts provide direct electrical and mechanical equivalence to the 1N5822 with active product status:

  • 1N5822-TP (Micro Commercial Co): Identical specifications in DO-201AD package, ROHS3 compliant, 10,223 units in stock. Cut Tape packaging suitable for automated assembly.
  • 1N5822-AP (Micro Commercial Co): Identical specifications in DO-201AD package, 732 units in stock. Bulk packaging available.
  • 1N5822RLG (onsemi): Active variant from original manufacturer, DO-201AA/DO-27 axial packages, ROHS3 compliant, 1,781 units in stock.

Functional Equivalents (Compatible Substitutes):

The following parts meet all electrical requirements with minor parameter variations:

  • SB340-E3/54 (Vishay): 40 V, 3 A, forward voltage 490 mV @ 3 A (35 mV lower than original), DO-201AD package, ROHS3 compliant, 1,711 units in stock.
  • SB340-E3/73 (Vishay): Identical to SB340-E3/54, 2,400 units in stock.
  • SB340_R2_00001 (Panjit): 40 V, 3 A, forward voltage 500 mV @ 3 A, extended temperature range -55°C to 150°C, ROHS3 compliant, 937 units in stock.
  • 1N5822 (Microchip Technology): 40 V, 3 A, forward voltage 500 mV @ 3 A, lower reverse leakage 100 µA @ 40 V, 26,834 units in stock. RoHS non-compliant status noted.
  • 1N5822RL (STMicroelectronics): 40 V, 3 A, DO-201AD package, ROHS3 compliant, 2,000 units in stock.

Limited Data Availability:

  • 1N5822G (Microchip Technology): Axial package configuration, active status, 15,800 units in stock. Detailed electrical parameters not provided; engineering verification required before selection.

All recommended substitutes maintain ROHS3 compliance, REACH unaffected status, and EAR99 export classification consistent with the original 1N5822.

Frequently Asked Questions (FAQ)

Q: Can I use 1N5822-TP as a direct replacement for the obsolete 1N5822?

A: Yes. The 1N5822-TP from Micro Commercial Co provides identical electrical specifications (40 V, 3 A, 525 mV forward voltage, fast recovery ≤ 500 ns) and mechanical configuration (DO-201AD axial package). Both are ROHS3 compliant with equivalent reverse leakage characteristics (500 µA @ 40 V).

Q: What is the difference between 1N5822-AP and 1N5822-TP?

A: Both parts are from Micro Commercial Co with identical electrical specifications. The primary difference is packaging: 1N5822-AP is supplied in bulk, while 1N5822-TP is supplied in cut tape format suitable for automated pick-and-place assembly.

Q: Are Vishay SB340 series parts compatible with 1N5822 applications?

A: Yes. SB340-E3/54 and SB340-E3/73 meet all electrical requirements with forward voltage of 490 mV @ 3 A (25 mV lower than 1N5822 specification of 525 mV). Both maintain 40 V reverse voltage, 3 A current rating, fast recovery characteristics, and DO-201AD axial package configuration. Lower forward voltage results in reduced power dissipation.

Q: What is the difference between DO-201AD and DO-27 packages?

A: Both are through-hole axial packages for Schottky rectifier diodes. DO-201AD and DO-27 are mechanically compatible axial configurations. The 1N5822RLG is available in both package variants.

Q: Can I substitute 1N5822 with SB340_R2_00001 from Panjit?

A: Yes. SB340_R2_00001 meets all electrical requirements (40 V, 3 A, 500 mV forward voltage @ 3 A, fast recovery ≤ 500 ns). The part offers extended operating temperature range (-55°C to 150°C) compared to the original 1N5822 (-65°C to 125°C). Tape & Reel packaging is provided.

Q: Why does the Microchip 1N5822 show RoHS non-compliant status?

A: The Microchip 1N5822 variant is marked as RoHS non-compliant. For applications requiring RoHS3 compliance, select alternative parts such as 1N5822-TP, 1N5822RLG, SB340-E3/54, SB340-E3/73, or SB340_R2_00001.

Q: What does "Fast Recovery ≤ 500 ns, > 200 mA (Io)" mean?

A: This specification indicates the diode switching speed is 500 nanoseconds or faster when reverse recovery is measured at forward currents exceeding 200 mA. This fast recovery characteristic is essential for high-frequency rectification applications and is maintained across all substitute parts listed.

Q: Is the 1N5822G from Microchip a suitable replacement?

A: The 1N5822G is available in active status with 15,800 units in stock. However, detailed electrical parameters (forward voltage, reverse leakage, capacitance) are not provided in the specification data. Direct electrical comparison cannot be performed without complete parameter documentation.

Q: What inventory levels are available for each substitute?

A: Highest inventory availability: Microchip 1N5822 (26,834 units), 1N5822G (15,800 units), 1N5822-TP (10,223 units). Moderate availability: SB340-E3/73 (2,400 units), 1N5822RL (2,000 units), SB340-E3/54 (1,711 units), 1N5822RLG (1,781 units). Lower availability: SB340_R2_00001 (937 units), 1N5822-AP (732 units).

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